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ZnO thin film prepared by a microwave heating technique
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Shinji Takahashi, Katsuki Shinohara, Katsuyuki Shiozaki and Masayuki Okuya |
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Abstract
We investigated a microwave heating technique to prepare transparent conducting ZnO thin films in air within a few minutes. A microwave was directly irradiated to a glass substrate by a commercial kitchen microwave oven with an output power of 2.45 GHz and 1000 W. The substrate temperature went up as high as 550ºC in a few tens seconds with increasing the thickness of a microwave absorbing layer attached on the back of the substrate. The electrical resistivity of ZnO film reached the minimum value of 4.1×10-4 Ω·cm by optimizing a dopant indium concentration.
Trans. Mat. Res. Soc. Jpn., Vol.35, pp.7-9 (2010). |